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The structure is simulated using using a 3D FDTD (Finite Difference Time Domain) method where the computational grid is terminated with UPML absorbing boundary conditions in all spatial directions. A grid resolution of 23.25nm is used which translates to 20 points per wavelength in the semiconductor at the mode wavelength. A dielectric function is applied at material interfaces to lessen the effects of staircasing on airhole representaion in the cartiesian grid and to improve solution convergence
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Movie specs: 13MB MPEG1 800x600 30.000 fps 125.0 kbyte/s |